Device Support Summary For "Cypress S34SL04G200BHI003" |
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Generated by: | BPWin V8.0.1 DeviceSupportUpdate.29 (3/27/2024) |
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Device Parameters |
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Manufacturer: | Cypress (ID=1DCh) | Part Number: | S34SL04G200BHI003 (ID=9095h) | 8-bit Bytes: | 570425344 | Memory Regions: | 0h-21FF FFFFh | Vcc(program): | 3.3 | Electrical Erase: | Yes | Packages: | BGA(63) |
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Note |
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IMPORTANT:
Device Type: | Flash Memory - NAND |
Device Size: | 4 Gbit |
Memory Organization:
Memory Type |
Attributes(*) |
Included in default Range (Y/N) |
DUT Physical Byte Address(hex) (if this area is selected/Activated) |
BPWin Buffer Byte Address(hex) |
Main Flash Area |
R/W/E |
Yes |
0000_0000 - 21FF_FFFF |
0000_0000 - 21FF_FFFF |
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Default Algorithm Range |
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0000_0000 - 21FF_FFFF |
0000_0000 - 21FF_FFFF |
* R:Read only, W: One time programmable (OTP), R/W: readable and one time programmable (OTP), R/W/E: readable and rewritable if not locked.
Any configurations listed under "Device-Specific" in the menu item Device-> Settings will be written to the DUT during "Program" operation regardless of memory range selection.
This is a NAND-type Flash Memory with a minimum of 4016 blocks. |
Each block contains 64 pages which are divided into a 2048 byte main page and a 128 byte spare area. |
This algorithm is mapped with each page considered an contiguous 2176 byte page. |
Block 1 of the device will always be erased in the ERASE operation. |
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= Supported |
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† = This is a replacement daughter card that requires a base socket module |
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Automated Production Programmers |
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Manual Production Programmers |
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Copyright © 2024, BPM Microsystems |
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